Sentence examples for min of pore from inspiring English sources

In the case of samples HA-Ml2.1 to HA-Ml2.4, there is a noticeable increase in the PL intensity up to 10 min of pore widening (Figure 1d).

As Figure 1c shows, for samples HA-Ox2.1 to HA-Ox2.4, the pore widening process produces a linear increase of the PL peak intensity from 0 to 45 min of pore widening time.

It shows that there is a linear increase of the PL peak intensity until 10 min of pore widening and an abrupt decrease between 10 and 15 min (Figure 2c).

Preliminary experiments verified that the NAAMs fabricated in malonic acid collapsed after 30 min of pore widening under these etching conditions ( Additional file 1: Figure S4). Figure 1e shows the PL spectra of samples HA-Ox3.1 to HA-Ox3.4.

Collapse of NAAMs fabricated in malonic acid after 30 ((a)) and 45 ((b)) min of pore widening in H3PO4 5 wt% at 35ºC (scale bar = 2 μm). Figure S5.

SEM images of AAO pores with different dw prepared by the pore-widening process in 10 wt.% phosphoric acid from 0 to 55 min: (a) 0, (b) 20, (c) 40, and (d) 50 min. The reduction of pore walls is marked by a red line.

Although the electrolyte DMF 5%5.4%%) allows for very good pore formation when etching for 30 min, reaching a pore depth of 50 μm, strong differences in using DMF 5%(1.5%) are found when etching for much longer times (540 min), reaching pore depths of 450 and 520 μm, respectively.

The rate of pore growth was fast at first 200 min heat treatment time and reduced slightly after around 200 min heat treatment time.

After 10 min of treatment, nearly all the pores were interconnected.

After chemical etching for 20 min, the outermost shape of pores changed from a circle to a hexagon.

After etching for 60 min the pore openings are larger than the gold nanoparticle diameter indicating the dissolution of porous silicon pore walls close to the surface (Figure 3C).