Sentence examples for defects and strains from inspiring English sources

Figure 1b shows the shifted (002) peak caused by the crystal defects and strains [20].

We have synthesised Bi2Se3 epitaxial thin films on c-sapphire substrates, where Se-related defects and strains are controlled precisely during pulsed laser deposition.

This allows us to tune electrical and magnetotransport properties and probe the role of defects and strains as a function of processing conditions systematically.

The crystal planes of an imperfect crystal are not perfectly flat and parallel, due to small defects and strains, and the wavefront is formed from scattering points as shown in Fig. 4 ▸(b).

This involves the loss of crystal defects and strains and also possibly aggregation between smaller crystal domains, which is a phenomenon observed in both natural and regenerated cellulose material [ 33].

The polarization field can be screened by applied voltage, free carriers or charged defects, and strain relaxation.

We perform non-equilibrium molecular dynamics calculations to study the coupling effects of surface, defects, and strain on heat transport in silicon nanowires (SiNWs).

The improvement is due to the fact that the GaAs capping layer is grown at a relatively low temperature of 500°C on a lattice-mismatched layer which result in non-radiative defects and strain.

Besides thermionic emissions of carriers from QDMs to NRR centers in the WL and bulk GaAs, other possible NRR centers and transport channels present in our lateral QDMs are the nanohole template, interfacial defects, and strain-induced localized states [42], and, considering the close proximity between cQD and sQDs in a QDM, may possibly involve tunneling [41].

Compared to Fe3O4 NPs, MCPs have lower M s which is attributed to the presence of nonmagnetic ZnO shell on the surface of Fe3O4 through (i) interaction of surface atoms of magnetite with nonmagnetic layer of ZnO [20] and (ii) surface defects and strain in nanocomposite [21].

Grandal et al. [10] reported that defect- and strain-free InN nanostructures of very high crystal quality can be grown by molecular beam epitaxy on silicon substrates.