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This research focused on the surface-enhanced Raman scattering (SERS) effect of the thickness of the deposited Fe film which was controlled by the sputtering time.
The Cu/Ni substrates were fabricated at low defect densities of the Ni substrates by RF magnetron sputtering and the composition of Cu atoms on Ni substrates were modulated by the sputtering time.
The thickness of each layer is tuned by the sputtering time.
After the deposition of SiN x, a Ag layer was deposited by magnetron sputtering, with the thickness regulated by the sputtering time (20, 40, 60, and 80 s).
The sputtering rate was approximately 10 nm/min, and the thickness of the Ni layer was changed by the sputtering time.
Furthermore, by putting this temporal concept into the energy dependency, it is not difficult to conclude that in the ion induced diffusion regime, the ion energy against characteristic wavelength profile can be shifted by the sputtering time.
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power of 120 W (target) and 100 W (coil) without substrate bias application, and the film thickness was controlled to ∼1 μm by adjusting the sputtering time.
In fact, the oxygen and Ti concentration increased similarly by increasing the sputtering time.
The thickness of Co film was varied from 2 to 7 nm by controlling the sputtering time.
To obtain the substrate with the best SERS effect, the amount of Au nanoparticles adhered on the nanorods was adjusted by altering the sputtering time.
Dramatically different dependences of CA on the sputtering time for the sputtering times below 200 s exhibit samples sputtered at the 40-mA discharge current.
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