The energy of the ions incident to the target surface during sputtering, i.e., the target cathode potential, was controlled by means of a dc high voltage power supply, and the number of the ions striking the target was controlled by adjusting the input power to the sputtering system from the rf power supply.
The coatings were deposited by triode sputtering system; the hexagonal phase was obtained for 10% of nitrogen in the Ar+N2 mixture used in the discharge, the cubic one was obtained for a percentage higher than 20%.
Tungsten titanium nitride films were synthesized by the reactive magnetron sputtering system and the influence of titanium content on the crystal structure, mechanical and tribological properties of the films were investigated.
AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system.
In this research work, CdTe thin films were deposited on the soda lime glass substrates by RF magnetron sputtering system, and the influence of the two experimental parameters of the deposition time and the RF power were examined on the physical properties such as: crystalline structure, morphology, and the band gap.
We observed that Ag nanoparticles produced by the modified magnetron sputtering system were homogeneously dispersed and long-term stable in the silicon oil-based fluid, and the average diameter of Ag nanoparticles was found to be ~ 3 nm, indicating that the modified magnetron sputtering system is also an effective one-step method to prepare stable nanofluids.
Thin films of zinc nitride were prepared by the RF magnetron sputtering system on fused silica substrates.
After the masking process, the GeO x switching material with a thickness of approximately 10 nm was deposited by the same RF sputtering system.
To avoid any atmospheric oxidation/contamination effects on the TaO x switching layer, an Ir layer of about 50 nm as TE was immediately deposited on the TaO x layer using an Ir target by a sputtering system.
In this study, ITO and AZO are deposited by a sputtering system with various pre-strain forces applied to the substrate.
