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Oxygen migration ability plays a key role in DOSC activities.
The oxygen migration is driven by imperfect stoichiometry of MgO at the Co/MgO interface.
The bonding between metal and oxygen leads to various oxygen migration behavior at the interfaces.
As for TiO2, oxygen migration leads to oxygen vacancies [21], the common defects in TiO2.
The rich Pt-CeO2 interface facilitates the oxygen migration, enhancing SO2 electrooxidation and ORR activity.
We investigate influence of oxygen migration in MgO/Co/MgO trilayer structure by varying Co and MgO layer thickness.
Similar(32)
The current approach uses a database of activation energies for oxygen vacancy migration, calculated using first-principles, for various migration pathways in praseodymium-doped ceria.
Basically, the conducting filament formation/rupture is due to the oxygen ion migration.
Oxygen ion migration and nanofilament (or NW) diameter were also investigated using this MIM structure.
The filament model of oxygen vacancy migration is used to elucidate the switching behavior [1, 11].
The filament model of oxygen vacancy migration can be used to explain the switching behavior.
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