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The thermal conductivity reduction by edge passivation increases with increasing neck width and porosity.
c Histogram of the neck width (w) between AAO pores with an average neck width of 29.7 nm (std. dev. ±2.6 nm).
The highly uniform 11-nm neck width creates a quantum confinement in NPG, which has led to a record bandgap opening of ~200 meV in graphene for the given level of neck width.
The NPG so produced exhibits homogeneous mesh structures with an average neck width as small as ~11 nm.
The long-range ordered network pattern of PS particle arrays with tunable neck width and length were obtained.
The NPG exhibits a homogeneous mesh structure with an average neck width as small as ~11 nm.
Roughly, κ decreases exponentially with increasing porosity and linearly with decreasing neck width, and is not temperature sensitive in the range of 300 K–700 K.
Figure 5c, d shows the electrical transport characteristics of a typical patterned graphene transistor with an average neck width of ~25 nm.
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No associations were found between the aluminium content in bone and femoral-neck width or area (Table 2).
By contrast, the FET device with a larger 25-nm neck-width NPG exhibits an order of magnitude smaller I on/I off ratio of ~5.3 with much less bandgap opening as shown in Fig. 5.
Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, which was utilized as a direct-contact template for oxygen plasma etch to produce near-periodic, small-neck-width NPG.
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