Sentence examples for middle shell of from inspiring English sources

(a) In the middle shell of 20 nm GaAs/10 nm Al0.3Ga0.7As/10 nm GaAs/10 nm Al0.3Ga0.7As/20 nm GaAs core-shell NW.

Because of the crosslinking of the middle shell of the triblock polypeptide micelles, their robust structure was maintained in strong destabilization conditions and exhibited excellent stability.

The lowest sub-band in the 8 nm middle shell of Figure 2a resides 80 meV above the Fermi level and that in the 20 nm InAs surface shell 65 meV below the Fermi level, but these are not strongly dependent on the core radius as shown by the inset of Figure 2a.

We have shown that the lowest m = 0 and m = 1 sub-bands in the middle shell of the InAs/InP/InAs/InP/InAs core-shell NW RTD shown in Figure 1a,b reside energetically above the two sub-bands in the core and surface shell thickness.

In contrast, many electrons can tunnel at the same time via one-dimensional sub-band states confined in the InAs middle shell of a InAs/InP/InAs/InP/InAs core-shell NW RTD which in turn is expected to yield a larger current-carrying capability.

The variation of the m = 0, n = 1, and n = 2 sub-bands E(n,m) in the 8 nm InAs middle shell of the 10 nm InAs/5 nm InP/8 nm InAs/5 nm InP/10 nm InAs core-shell NW RTD with applied voltage is also shown as an inset in Figure 2b.

PANI/C/TiN NWA has unique shell/shell/core architecture, including a core layer of TiN NWA with a diameter of 40 160 nm and a length of 1.5 μm, a middle shell layer of carbon with a thickness of about 6.0 nm and an external surface layer of PANI with a thickness of 20 50 nm.

An optimum energy configuration is obtained for InAs/InP/InAs/InP/InAs core-shell NW RTDs with core radii and surface shells >10 nm, InAs middle shell thicknesses of 5 to 10 nm, and 5 nm InP barriers.

This is different to the case of InAs shown in Figure 1b where the lowest m = 0 sub-band changed from 172 meV up to 500 meV above the CB edge upon reducing the thickness of the middle shell from 10too 2 nm and is a direct consequence of the lower effective mass of electrons in InAs compared to GaAs.

We also find a second sub-band in the InAs middle shell close to the top of the barrier, i.e., 414 meV above the Fermi level.

The sub-bands belonging to the m = 0 and m = 1 ladder of states in the middle shell have similar wave functions and energies.