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The earliest memory devices were electro-mechanical switches, or relays (see computers: The first computer), and electron tubes (see computers: The first stored-program machines).

Initially, all memory devices were in HRS.

Resistive switching memory devices were fabricated on 8-in.

The virgin memory devices were programmed to LRS with positive bias and were swept back.

Flexible Ru/Lu2O3/ITO RS memory devices were fabricated on flexible polyethylene terephthalate (PET) substrates.

Initially, all memory devices were in high-resistance state (HRS), and positive sweeping voltage was applied.

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Similar(38)

Man-made memory devices are now constructed using associative principles, and there is a great potential in this field.

High-density memory devices are required for future applications.

After the forming process, the memory devices are in LRS.

Non-volatile memory devices are realized using CVD and ALD of all active layers in a cluster tool.

The cross-point memory devices are observed by high-resolution transmission electron microscopy (HRTEM).

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