Sentence examples for memory devices was from inspiring English sources

Electrically induced switching between low and high conductivity states of two terminal memory devices was demonstrated through I-V, C-V and Write Read Erase Read sequences.

In general, BRS in oxide memory devices was attributed to the drift of oxygen ions.

Because of a higher charge-trapping density (Figure 6), the average leakage current of the S2 memory devices was higher than that of the S1 devices.

The memory devices were heavy and slow.

Non-volatile memory devices are realized using CVD and ALD of all active layers in a cluster tool.

Memory devices are a special class of integrated circuits that are used to store binary data.

Man-made memory devices are now constructed using associative principles, and there is a great potential in this field.

Then, metal Al2O3 HfO2 Al2O3 HfO2 SiO2 Si (MAHAHOS) structure and metal Al2O3 HfO2 Al2O3 HfO2 Al2O3 Si (MAHAHAS) structure memory devices were fabricated and the memory characteristics were compared.

Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design.

Memory devices are a special class of integrated circuits that are used to store binary data for later use.

Tunneling barrier engineered charge trap flash (TBE-CTF) memory devices were fabricated using the tunneling barrier engineering technique.