Sentence examples for memory cells based from inspiring English sources

The phase-change memory cells based on N-doped Sb-rich Si Sb Te materials display more stable and reliable electrical performance than the nitrogen-free ones.

Phase-change memory cells based on the four films have shown promising switching properties with high-resistance ratio (three orders of magnitude) and good durability.

The representative endurance performance of the four memory cells based on electrodeposited GeSbTe films were characterised by electrical pulsing as shown in Fig. 6.

Memory cells based on the bending of cantilever and suspended carbon nanotubes, and the relative motion of the walls of carbon nanotubes are discussed.

In this paper, we demonstrate a novel conductive process for resistive random access memory cells based on nanoporous AAO filled with CoFe nanowires and covered by a layer of CoFe2O4 film.

We then analyzed both CD4+ and CD8+ T cell and subpopulations of naïve and memory cells based on the expression of CD45RA, CD62L, and CCR7 as previously described [26].

(a) the schematic illustration of sample and (b) the scheme of operation of a memory cell based on conductive filament model.

Memory T cells can be categorised into central and effector memory T cells based on the expression of the chemokine receptor CCR7 [ 7].

These lymphocytes were defined as non-switched (IgM+ IgD+) memory B cells based on the findings that they express the putatively memory B cell marker CD27 [ 2], and harbor IGV genes exhibiting a low but detectable number of somatic mutations, an event classically restricted to post-germinal center (GC) memory B cells [ 2, 9].

Despite several studies, definitive identification of memory B cells based on CD27 surface expression has not been described.

Interestingly, Zhang et. al. [14] demonstrated CLL cells are more like memory B cells based on miRNA profiling, our miRNA profiling data showed CLL cells are behaving like activated B cells at an earlier time point.