Exact(8)
Later experiments showed that sending a current through pure, dry oxygen (O2) creates ozone (O3).
The sandwiched Si Me/SiO2/Si samples were further thermally oxidized in dry oxygen ambient.
Tellurium dioxide was deposited in thermochromatography experiments when using dry oxygen as carrier gas.
The uniform SiO2 layer 6 nm in thickness (tunnel oxide) was first grown in a dry oxygen ambiance.
Oxide was grown in a dry oxygen atmosphere in a high-temperature furnace at 1,100°C.
The oxidation behavior of the same alloys was also examined at 1000°C in dry oxygen.
An additional absorption band is observed near the fundamental absorption edge in the doped samples annealed in dry oxygen.
Ozone was produced in an ozone generator fed by dry oxygen and all reagents were used as received without further purification.
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