Exact(8)
After growth, the samples were cooled down in H2 ambient.
After growth, wafers were diced and thermally annealed.
After growth, the sample was cooled down to room temperature immediately.
After growth, the substrate was covered by a layer of wax-like product.
After growth in shakeflask the broth was centrifuged at 6000×g, 4 °C for 30 min.
After growth, the samples were rinsed with deionized water and then dried in an oven.
After growth, the structures were then processed following the standard III-V solar cell device art.
After growth or annealing processes, the temperature was decreased to room temperature immediately.
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