Sentence examples for write schemes from inspiring English sources
Fig. 6 Memristor crossbar array write schemes.
This paper also presents energy efficient readout and write schemes for reducing dynamic energy consumption.
b 1/3V DD write scheme [17].
Additionally, SOS design is once implemented with a reliable write scheme and once with an energy-efficient write scheme and results are compared and analyzed.
The memristance values that are found by the training process were written to the crossbar array circuit by the VDD/3 write scheme that is known better in mitigating the half-selected cell problem compared to the VDD/2 write scheme [22].
Here, we can use the 1/2V DD write scheme or 1/3V DD write scheme [17] in training memristors to have the target resistance values of HRS and LRS in this paper.
Figure 6a shows the 1/2V DD write scheme, where the selected cell is applied by V DD and GND.
A column-aware feedback-cutoff write scheme is employed in the cell to achieve higher write margin and non-intrusive bit-interleaving configuration.
If the unselected cells which should be driven by 1/2V DD are very susceptible to this small voltage of 1/2V DD, we can use the 1/3V DD write scheme, as shown in Fig. 6b.
By taking v n = P C (z n - ζ n Az n ), w n = P C (z n - δ n Bz n ) and J n k = J r k, n F k ⋯ J r 2, n F 2 J r 1, n F 1 for k ∈ {1, 2,..., M} and J n 0 = I for all n ∈ ℕ, we shall equivalently write scheme (11) as follows: z n = J n M x n, y n = η n v n + ( 1 - η n ) w n, x n + 1 = α n f ( T μ n W n y n ) + β n x n + γ n T μ n W n y n, n ≥ 1.
