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For bulk semiconductors with direct transition, m = 0. 5.
ZnO is a n type semiconductor material with direct transition, and its Fermi level will enter into the conduction band when it is heavily doped.
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The average value of the energy gaps (4.2 eV) is comparable with the direct transition (Г25' - Г2') in unconfined Si.
During rapid cooling, the massive-type transformation with a direct transition α → γ replaces the primary γ lamellae precipitation.
Optical absorption study shows the presence of direct transition with band bap 1.78 eV.
Experimental optical absorption in a-GaSe obeyed the indirect transition process with an optical gap of 1.8 eV, while that in poly-GaSe obeyed the forbidden direct transition with an optical gap of 1.83 1.96 eV.
The band at around 500 nm is associated with the direct transitions from the valence band to the conduction band [25].
For example, in our calibration dataset (Muestra Continua de Vidas Laborales, referred to henceforth as MCVL), more than 55% of withdrawals from the labor force involve the use of the UI system, with standard direct transitions from employment into retirement.
The film is p-type with stoichiometric excess of SCN and a direct transition gap of 3.7 eV.
The variation of (αhν) with hν is linear which indicates that a direct transition is present.
The absorption associated with the direct band gap is located in the visible spectrum around 700 nm and results from a direct transition at the K point.
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