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BSIM3 is a physical MOSFET model with extensive built-in dependencies of important dimensional and processing parameters such as channel length, width, gate oxide thickness, junction depth, substrate doping concentration, and so on.
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The gate width, gate-source spacing, gate length, and gate-drain spacing were 50, 4, 2, and 4 μm, respectively.
Cells were pulse-width gated to exclude doublets.
Side scatter, forward scatter, and pulse-width gates excluded debris and aggregates.
Propidium iodide staining was used to label dead cells and FSC: pulse-width gating to exclude cell doublets (MoFlow, Dako).
PI staining was used to label dead cells and FSC: pulse-width gating to exclude cell doublets.
Pulse-width gating excluded cell doublets while dead cells were excluded by addition of PI and gating on the negative cells.
Side scatter, forward scatter, and pulse-width gates were used to exclude debris and aggregates and Venus-positive cells were collected at approximately 95% purity, alongside negative (control) cells that comprised a mixed population dominated by other epithelial cell types (13).
Sorted cells were selected through sequential gating (see online supplementary figure S3A) based on forward scatter (FSC), side scatter (SSC), trigger pulse width, to gate out doublets, DAPI to gate out dead cells and CD31/CD45 binding to exclude haematopoietic and endothelial cells.
Moreover, the models exactly depict the influence of pocket doping, pocket width, and gate dielectric constant on the surface potential, electric field, and drain current of a HGD SP TFET.
The results show that wide gate width in the 3D model can induce a response to the calculated results similar to that obtained in a 2D situation.
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