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The wider band gap can be attributed to the interaction of local resonance and Bragg scattering.
ZnS has a wider band gap (Eg = 3.7 eV) than CdS.
Consideration of anisotropy results in a wider band gap and shallower potential well as compared with the isotropic model.
On the other hand, they have a much wider band gap than the materials available commercially for photovoltaic cells.
The n-ZnO/p-CuGaS2 LED structure was designed to enable an electron injection from the n-type wider band gap material forming a TYPE-I heterojunction.
However, performance levels are still lagging those of InGaN light emitters in the visible region due to outstanding materials challenges of the wider band gap AlGaN alloys.
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Semiconductors and insulators may be differentiated by the size of their band gaps, the former having narrower band gaps and the latter having wider band gaps.
Besides, due to the introduction of BeO with a wide band gap, BeZnOS quaternary films exhibited wider band gaps than the ternary ZnOS films with similar S contents.
The band dispersions exhibit wider band gaps with stronger substrate effect.
A novel hybrid phononic crystal is designed to obtain wider band gaps in low frequency range.
The wide band gap semiconductors, viz.
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