A single colony was used to inoculate an initial 5 mL culture, which was grown overnight to turbidity.
This culture was used to inoculate a second 5 mL culture to an OD600 (optical density at 600 nm) of 0.01, which was grown for 18 h.
The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si0.7Ge0.3 "virtual substrate".
To minimize the cost, the devices were normally fabricated on an epitaxial layer which was grown on a highly-doped substrate.
The MW absorption of non-stoichiometric TiO2 layer, which was grown during the initial hybrid heating, resulted in sintering of apatite particles interfacing them.
A 200-cycle deposit, which was grown with the steady deposition potentials, was proved to be a single phase Sb2Te3 compound by X-ray diffraction analysis.
S. mutans MT8148, which was grown for 24 h to reach stationary phase, was adjusted to a final concentration of 1.0 × 109 CFU/ml in BHI broth with or without S-PRG eluate.
A single colony was used to inoculate an initial 50 mL preculture in a 250 mL glass Erlenmeyer flask, which was grown for 1 day at 20 °C with shaking at 200 rpm.
We investigated a high-quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) structure, which was grown on a (1 0 0) GaAs substrate by molecular beam epitaxy.
The prepared compounds were subjected to in vitro antileukemic and antiviral activity upon a new L1210 cell line that is doubly resistant to both hydroxyurea and deoxyadenosine which was grown and characterized.
The investigated structure designed for electron or hole storage in the QDs consists of a modulation doped two-dimensional channel which was grown on top of a layer of InAs QDs, separated by an asymmetric tunnel barrier.
