D. Kamburov, K.W. Baldwin, K.W. West, M. Shayegan, and L.N. Pfeiffer, "Interplay between Quantum Well Width and Interface Roughness for Electron Transport Mobility in GaAs Quantum Wells," Appl.
The absorption spectra dependence on the well width are discussed.
Akhgar, G. et al. G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond.
The average decay time increases exponentially with the product of the well width to indium composition.
The influences of temperature, quantum well width, and impurity concentration on the optical absorption are studied.
Well width equaled half a segment diameter and well depth was either zero or −0.30 kBT.
All of the experimental results show that the resulting comprehensive optical performance of the MQW structures with a fixed emission wavelength, in fact, is mainly a result of the competition between the indium content and well width as well as the injection current, and consequently exploring a suitable indium content and well width is crucial to improving the optical performance of such LEDs.
It was also found that the depth of the localized states increases with the well width of the underlying superlattices.
Consequently, to obtain such a high-efficiency LED with a fixed emission wavelength, it is necessary to investigate the combined effects of the indium content and well width on the optical properties of LED.
Therefore, for the InGaN/GaN MQW-based LED with a fixed emission wavelength, its resulting comprehensive optical performance, in fact, is mainly a result of the competition between the indium content and well width.
It is demonstrated that the AHE current can be effectively tuned by the inserted ultra-thin InAs layers and by the well width.
