Sentence examples for well thickness from inspiring English sources

Liu, W. et al. Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness.

Shakfa, M. K. et al. Carrier dynamics in Ga NAsP /Si multi-quantum well heterostructures with varying well thickness.

When the well thickness is sufficiently thin, EQE and ECE increase with an increase in the well thickness owing to an increase in light absorption.

Wei, X. C., Zhang, L., Zhang, N., Wang, J. X. & Li, J. M. Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness.

The results indicated that EQE and ECE have maximum values at a specific well thickness.

In this case, increasing well thickness can improve the confinement of wave function of carriers inside the quantum well, resulting in the decrease in threshold with increasing well thickness.

Li, Y. L., Huang, Y. R. & Lai, Y. H. Investigation of Efficiency Droop Behaviors of InGaN/GaN Multiple-Quantum-Well LEDs With Various Well Thicknesses.

Using this formalism, where intra-subband energy levels are neatly identified, we study the optical response for different barrier and well thicknesses, and show that this quantity is very sensitive to small changes in the superlattice parameters.

Two critical quantum well thicknesses are obtained in the nanowire core-multishell heterostructure.

Further engineering of the electronic structure could be achieved by considering the different well thicknesses and alloyed materials in the superlattices.

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively.