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Pulsed laser irradiation is one of the promising techniques in quantum well intermixing.
The results of spatially resolved photoluminescence indicate that the ion-implantation-induced quantum well intermixing significantly raises the electronic sub-band energies in the side quantum wells (SQWs) and vertical quantum wells, and a more efficient accumulation of electrons in the quantum wires is achieved.
To our knowledge, quantum well intermixing was used for the first time in these systems to widen the band gap in the grating region, and significant improvement in performance is obtained from the distributed Bragg reflector (DBR) lasers with intermixed grating region.
Large bandgap blueshifts in III V quantum semiconductor microstructures are achievable with UV-laser induced quantum well intermixing (QWI).
InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD).
The ultraviolet laser induced quantum well intermixing process has been investigated for prototyping of multiple bandgap quantum well (QW) wafers designed for the fabrication of superluminescent diodes (SLDs).
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Multidimensional plots of the training, validation 1 and validation 2 datasets, before and after correction of batch effect show that before application of the batch adjustment algorithm, each dataset clearly separated from all the others ("batch effect"), whereas after correction of batch effect, samples from all datasets were well intermixed (Figure S1).
Hierarchical clustering in the combined training set revealed that, before application of the batch adjustment algorithm, each dataset clearly separated from all the others reflecting non-biological experimental variation ("batch effect"), whereas after adjustment for batch effect, tumor samples from all datasets were well intermixed (Figure 2).
The batch adjustment algorithm was applied in the combined training set to ensure that all the datasets were well intermixed [ 30].
Finally, the effect of quantum-well intermixing is considered, and the expected performances of quantum-well-intermixed electroabsorption modulators are presented.
A variety of approaches have been used to broaden the spectral bandwidth by engineering the device active regions through including quantum dots [1], multiple quantum wells (MQWs) [2], stacked twin active layers [5], asymmetric dual quantum wells [6], and quantum-well intermixing [7].
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