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The thickness of InGaAs SBL and SRL was systematically varied.
The Cu layer thickness was systematically varied in different samples.
The annealing temperature was systematically varied between 400 and 900 °C for 450 s (multi-layers).
Of Ge/Si QD samples where the capping temperature Tcap was systematically varied.
The ZnO deposition temperature was systematically varied, while all other parameters were kept constant.
The required effector set was systematically varied between prime and probe responses.
The number of cycles was systematically varied between 103 and 105.
The concentration of silica particles was systematically varied, showing minimal influence on hydrophobicity and mechanical properties.
The composition of the water phase was systematically varied (pH, ionic composition, presence of dissolved components).
The nitrogen partial pressure during deposition was systematically varied both in HiPIMS and dc-MS processes.
The distance between enzymes was systematically varied from 10 65 nm, and the corresponding activities were evaluated.
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