Exact(3)
Characterization of the wafer materials and the design of the strip sensors have advanced through the development of ATLAS05, ATLAS06, and ATLAS07 sensors.
Several test structures and sensors have been designed and manufactured on 18 different combinations of wafer materials, thicknesses and production technologies.
With the fast advancement of material science and engineering, many new materials were developed that could be machined, such as metal matrix composites and silicon wafer materials.
Similar(57)
The choice of wafer material, the processing techniques, and the sensor layout are discussed.
We use lithium niobate as a wafer material and Ti LiNbO3 for waveguide.
The wafer material used was moderately doped p-type (100) silicon with resistivity of 0.08 to 0.10 Ω · cm.
This equation suggests that the light transmittance of the graphene layer on a substrate decreases with the increasing dielectric constant of the wafer material at a fixed σ.
The wafer material used was highly-boron-doped CZ silicon with maximum resistivity of 25 mΩ cm, with 150-mm diameter and 675±20-μ m thickness.
445 m2 of wafer material will be used to cover the active tracking volume with 24,328 silicon sensors with a surface of 206 m206
The loose ion exchange resin beads used in conventional electrodeionization were immobilized and molded to form a porous resin wafer material.
New device architectures and concepts based on silicon wafer material are being developed to support the development of the IC industry for another one or two decades.
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