Sentence examples for wafer configuration from inspiring English sources

In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%.

In this paper, varying the active area of the top electrode from 0.09 to 25 mm2 shows that for an Al AlN Al on silicon wafer configuration connected with a JSR Ultrasonics pulser/receiver (50 ohms), the optimal electrode size is 1 mm2.

The fifth paper developed a mathematical model for the wafer shape and the sixth paper studied machine configurations for spindle angle adjustments.

We propose technique for high immunity MHz current measurement by solid state sensor in wafer-level configuration.

The paper deals with the global, reactor scale modelling and simulation of metal organic vapour phase epitaxy (MOVPE) growth of GaAs-based III V compound semiconductor thin films in large production scale Planetary Reactor® with various wafer load configurations.

A multi-cathode direct current plasma enhanced CVD reactor, designed to deposit thick diamond wafers in its conventional configuration, has been used.

With the help of PC1D software, role of SixGe1−x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement.

Ultrasonic Lamb wave modes were selectively generated by surface-bonded piezoceramic wafer transducers in two tuned configurations.

Simulation results demonstrate the effectiveness of the proposed control strategy, and provide guidelines for the design of the multivariable control configuration to achieve better wafer temperature uniformity.

The simulation results show the effectiveness of the proposed control strategy and provide helpful guidelines for the design of a multivariable control configuration to achieve superior wafer temperature uniformity.

These results suggest appropriate geometric configuration of the graphite-wafers for maximum enhancement of active-passive damping.