However, the presently designed ICs with nanometer technologies continue to require "high voltage" interface compatibility through applications such as PCI, etc.
Guidelines are provided predominantly for low-voltage I/O libraries that are commonly used for general purpose interfaces and industrial low-voltage interfaces such as DDR, MLB, USB, etc.
The new proposed 2xVDD-tolerant I/O buffer has been designed and fabricated in a 0.13-μm CMOS process with only 1.2-V devices to serve a 2.5-V/1.2-V 2.5-V/1.2-V 2.5-V/1.2-V, without using the additional thick gate-oxide (2.5-V) devices.
In particular, many customers' applications such as automotive, Smartphone, tablet PC or touch pad can be concerned by high performances, low voltage haptic interfaces which allow the user to interact with its environment by the sense of touch.
This paper presents an overview on the design concept and circuit implementations of ESD protection designs for mixed-voltage I/O interfaces with only low-voltage thin-oxide CMOS transistors.
The acquisition parameters were as following: interface voltage, 4.5 kV; interface temperature, 250°C; desolvation line temperature, 250°C; heat block temperature, 400°C; desolvation gas, nitrogen; desolvation gas flow rate, 3.0 l/min; drying gas, nitrogen; drying gas flow rate, 15 l/min; collision gas, argon; and collision gas pressure, 230 kPa.
Especially, the ESD protection designs for mixed-voltage I/O interfaces with ESD bus and high-voltage-tolerant power-rail ESD clamp circuits are presented and discussed.
This chapter "Low Voltage Logic Interfacing" deals with the common problem of interfacing devices in systems, which operate on multiple supply voltages.
Without pulses, a smooth interface between the silicon substrate and columnar and oriented TiO2 is observed, whereas at 10 kV pulse voltage an interface of 18 nm thickness was measured, which corresponds well to the projected range of Ti ions.
A medium voltage power interface for a variable speed Wind Turbine is presented in this paper.
The mobility, switch-on voltage, and interface resistance were affected by the applied pressure, and thus the transistor could be used as a pressure sensor.
