The new proposed 2xVDD-tolerant I/O buffer has been designed and fabricated in a 0.13-μm CMOS process with only 1.2-V devices to serve a 2.5-V/1.2-V 2.5-V/1.2-V 2.5-V/1.2-V, without using the additional thick gate-oxide (2.5-V) devices.
Guidelines are provided predominantly for low-voltage I/O libraries that are commonly used for general purpose interfaces and industrial low-voltage interfaces such as DDR, MLB, USB, etc.
A medium voltage power interface for a variable speed Wind Turbine is presented in this paper.
The range of transducers includes LVDT, AC/DC strain gauge and inductive bridges, and a range of standard industrial voltage current interface transducers.
The proposed design aims at reducing the electric field strength at sheath/high voltage insulator interface as well as at the dry bands formed over the wet polluted or ice covered insulator.
Here, to amend the high voltage cathode/electrolyte interface of LiNi0.5Mn1.5O4, we proposed a conformal nano-coating strategy by in-situ polymerization of poly ethyl α-cyanoacrylate) (PECA) on its surface.
The mobility, switch-on voltage, and interface resistance were affected by the applied pressure, and thus the transistor could be used as a pressure sensor.
The ionization tip voltage and interface temperature were set at 1250 V and 150°C, respectively.
The detection voltage and interface temperature were 1.60 V and 400°C respectively.
This chapter "Low Voltage Logic Interfacing" deals with the common problem of interfacing devices in systems, which operate on multiple supply voltages.
