Sentence examples for voltage formation from inspiring English sources

The effects of formation voltage, formation current density and passivation medium on the properties and stabilities of the anodic oxide films formed on Ta was also investigated.

The effects of formation voltage, formation current and frequency on the dissolution behaviour of the formed oxide layers in both media were studied.

During the initial stages of anodizing at constant voltage, cell formation is accompanied by current peaks in the current time response.

Sputter-deposited zirconium and Zr 16 at.% Si alloy have been anodized to various voltages at several formation voltages in 0.1 mol dm−3 ammonium pentaborate electrolyte at 298 K for 900 s.

Figure 5 Cumulative probability of leakage current, formation voltage, SET/RESET voltage, and RESET currents.

The capacitance was measured during a potential sweep from the formation voltage in the negative direction at a sufficiently high sweep rate that the thickness of the film remains constant.

Furthermore, the transport number of Al3+ ions and amount of incorporated anions decreased with decreasing formation voltage, particularly at the voltage lower than 10 V.

Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA.

The discharge voltage for the formation of LiOH is higher than that for the formation of Li2O2, while the charge voltage for the decomposition of LiOH is lower than that for the decomposition of Li2O2.

The dissolution of the anodic oxide film formed on antimony in NaF solutions was investigated as a function of the fluoride ion concentration, formation voltage, and temperature using impedance and potential measurements.

An extra formation voltage is needed for the Al/GeO x /W devices, while a low operation voltage of ±2 V is needed for the Cu/GeO x /W cross-point devices.