Fluctuation and drastic drop did not happen at higher applied voltages which indicated the CNTs had a good contact with the substrate and high-voltage endurance.
Bipolar resistive switching (RS) memory behaviors with favorable resistance ON/OFF ratio, high retention and voltage cycling endurance performance are observed in the CPs-based device.
Figure 4 Resistance voltage and endurance characteristics.
It can reduce the problem of charge loss encountered in conventional memories, cause thinner injection oxides and hence smaller operating voltages, better endurance and faster write/erase speeds.
By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar.
The FG memory has achieved high density, good program/erase speed, good reliability, and low operating voltage and promotes endurance for Flash memory application.
Among the various thicknesses of the TiO2 buffer layer, 4 nm was the most appropriate thickness that maximized the improvement with negligible sacrifice of the other device performances, such as the reset/set resistance ratio, voltage window, and endurance.
The fabricated RRAM crossbar array with structure of Pt/[AlO y /HfO x ] m /TiN shows excellent device performances such as large resistance window (>80), uniform switching voltage, high switching endurance (>107 cycles), high-disturbance immunity (>109 cycles), and good retention (>105 s at 150 °C).
Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance.
The cells with a structure of Al2O3/HfO2/Al2O3 exhibited fantastic uniformity of set and reset voltages, and excellent endurance of switching between the LRS and HRS [14].
