Sentence examples for voltage boundary from inspiring English sources

The bias voltage boundary between low and high injection conditions, Ψbi = 4.7 eV, was well reproduced.

This value is compared with a pre-defined voltage boundary to adjust the tap changer position.

The importance of setting a proper voltage boundary for the tap changer to actuate makes its design harder.

The tap changer voltage boundary, based on a weighted average network value, is set at ±5% of the reference value (1 pu).

However, at high solar power integration levels, the reactive absorption rises due to the voltage boundary proximity of the inverters located at the end of the line which causes greater power losses.

Run buffer conductivity in the fsPAG structures was estimated to be similar to that of PAG in glass microfluidic chips, as described by Duncombe et al. The mobility and diffusivity of the model protein, TI, was estimated as per Herr and Singh and Hughes et al. The voltage boundary conditions were set at each terminus of the fsPAG structure.

Umin, Umax are voltage boundaries −5%/+5% while P1, P2, P3 are defined as 0.15, 0.5 and 0.85 pu, respectively, due to the similar values of every case.

However, the majority of the past studies loosely assume that all generators and loads in microgrid are connected to one bus, hence ignore the underlying distribution network constraints, e.g. node voltage boundaries.

A linear relationship between applied voltage and boundary strain fluctuations was assumed, which leads to an analytic expression for the quasi-static diaphragm displacement amplitude in terms of diaphragm properties and biasing pressure.

Fault discrimination has been carried out using the magnitude of observed rate of rise of current [10], magnitude of the rate of change of line side voltage of the boundary inductor [9, 10], the time rate of voltage across the boundary inductor [11], or the magnitude of backward travelling wave [12].

On both sides of the detector array there is a system of guard rings, which smoothly adjusts the voltage of the boundary cells to the ground potential of the silicon outside the sensitive volume.