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Apparently the dominant dissolution process switched from prop removal to etching of the void surfaces.
It is found that dislocation loops carrying outward flux of matters are nucleated at void surfaces [9, 13].
As shown in Figure 2a, after an initial elastic range, the first peak occurs representing yielding through dislocation emission from the void surfaces.
The H liberated from the (Si-H) n groups and (Si-H2) n polymers decorating the void surfaces is expected to form molecular H2 within the voids.
As shown in Figure 3, the close agreement between the blue (yielding stresses of twin-free samples) and pink (yielding stresses of NT samples) data implies that twin planes do not influence the nucleation of dislocations from void surfaces.
Then, nitrogen enters the voids and reacts with Al on the void surfaces to form AlN, which spoils the adhesion at the boundary.
Similar(48)
(a) Partial dislocations are nucleated at the void surface.
Values of the order parameters across the void surface are shown in Ω− (void) and matrix.
These boundary conditions require the normal fluxes of point defects at the void surface to be matched to the reaction rates of point defects with the void surface.
∂Ω is the outer boundary and Γ is the sharp void surface.
Ignoring the contribution of surface diffusion to the motion of the void surface, the model is summarized here.
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CEO of Professional Science Editing for Scientists @ prosciediting.com