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This "process view" explains how life can be emulated in a computer, since the same processes can occur in other virtual substrates made from abstract symbols and rules for their interaction.
The electrical performance of devices fabricated on thin virtual substrates grown by two different techniques is presented.
Recently, we also demonstrated the realization of SiGe nanorod arrays on SiGe virtual substrates using NSL combined with catalytic etching [19].
In this study, strained silicon layers grown on SiGe virtual substrates have been investigated by Raman spectroscopy to determine their strain and if any strain relaxation has occurred.
SiGe/Si resonant tunneling diodes (RTDs) grown on relaxed n-Ge0.3Si0.7 n-Ge0.3Si0.7trates are attractivirtualcesubstratespower/high-frequency arelicattractivepatible with Si-CMOS technology.
Ge virtual substrates have been developed via low-temperature CVD based on new hydride molecular chemistry routes fully compatible with conventional CMOS.
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Figure 1 Device structure of the QDIP on SiGe virtual substrate (VS).
Further, strained Ge MOSFET on SiGe virtual substrate was shown to improve the hole mobility [1].
SiGe heterojunction bipolar phototransistors based on Si1−yGey virtual substrate have been proposed in this paper.
One of the possible SiGe configurations involves the growth of Si1−xGex on a virtual substrate (VS).
To partially release these issues, a Ge virtual substrate (GeVS) deposited on Si miscut wafers is commonly used [7].
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