Sentence examples for virgin device from inspiring English sources

"Please," I begged her, "just show me how to check messages!" I took the virgin device for a test-drive the other day.

The initial resistance of the virgin device is ~1011 Ω at 0.1-V read voltage.

The formation mechanism of the conducting filament in the virgin device could be explained as follows: the oxygen vacancies present in the virgin device can be imagined to be formed partially during the deposition of the nonstoichiometric (oxygen deficient) CeO2 and partially as a consequence of Zr oxidation.

More specifically, when a positive voltage is applied on a virgin device in the P-Forming process, the Cu atoms are oxidized into Cu2+ and reduced to Cu atoms inside the ZrO2 layer [13, 24].

When a positive voltage sweeping (0 → 4.5 V) was applied on a virgin device, a current abrupt can be observed at about 3.3 V and then the device switched to ON-state.

Vice versa, when a negative voltage is applied on a virgin device in the N-Forming process, an oxygen vacancy CF will be formed due to the oxygen ion diffusion and migration [16, 17], as shown in Fig 6b.

The virgin Cu/ZrO2/Pt device can be formed in both positive and negative voltage polarities.

The virgin memory devices were programmed to LRS with positive bias and were swept back.

The trend of resistance coming back to device's virgin state is depicted in Fig. 3c for TaO/AlO x and in Fig. 3d for TaO/HfO x.

In addition, when a negative voltage is applied to a virgin oxide-based ECM device, which is called negative forming (N-Forming) process, an oxygen vacancy CF can also be formed to bridge the electrodes [16, 17].

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