In order to optimize TSV design and the quality of via filling, a numerical model of Cu-filled TSV was established to simulate and analyze the effect of diameter, aspect ratio (AR) and defects on TSV thermal stress and deformation in this paper.
It usually requires temporary bonding or attaching technology with Cu seed layer at the bottom to complete the via filling process.
One of the advantages of the bottom-up TSV approach is the ability to avoid seams or voids during via filling [28, 29].
Furthermore, TSV fabrication has various important processes, including via formation by deep reactive ion etching (DRIE), lining with dielectric layer, barrier and seed layers, via filling, chemical mechanical polishing (CMP), and Cu revealing process.
The supported LaNiO3 perovskite catalysts on mesoporous carrier (LaNiO3/SBA-15, LandO3/MCM-41 and LaNiO3/SiO2) with different pore structures have been synthesized via filling the pores of mesoporous silica with citrate complex precursors of nickel and lanthanum, with further treatments.
The sample was introduced via filling ports.
The electrical communication between the biochip front and backside is enabled by through-hole via-contacts filled with conductive PDMS containing 60 wt% graphite powder.
It has been demonstrated that regardless of the choice of via formation method, it is feasible to achieve a controllable via taper to realize a void-free copper via-filling by electroplating process.
It was confirmed that copper sulfate concentration in copper sulfate plating bath is one of the key factors to fill the micro-vias, and the vias can be filled using a high copper concentration bath.
Via a fluid filled polyethylene catheter, inserted in the jugular vein, potassium chloride (KCl: 0.08 mg/kg) was administered and subsequently CA induced.
