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We investigate two verify level control criteria.
Based on these advantages and disadvantages of verify level criteria, we investigated the application of verify level control criteria for the hybrid SSD.
We will extend these proposed verify level control criteria for other distributions.
As M increases, the verify level control will be more important and complex.
In this article, we investigated the verify level control criteria of ISPP for MLC flash memories.
In this article, we investigate two verify level control criteria for MLC flash memories.
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For high data reliability, the control of verify levels in ISPP is important because the bit error rate (BER) will be affected significantly by verify levels.
In the ISPP scheme, Δ → can be controlled by verify levels and ρ → by the incremental step size.
In brief, ISPP can control both the distances between states by verify levels and the tightness of program states by the incremental step size.
Furthermore, the number of verify levels which ISPP has to control increases from 1 (for SLC) to 2 M −1 (for M-bit/cell MLC).
In flash memories, distances between 2 M states can be controlled by adjusting verify levels during incremental step pulse programming (ISPP).
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