Exact(1)
Where Q it is the charge of HfO2/TiN interface trap, δ x is the bulk charge density of the oxygen vacancies, S is the area of the wafer and ε HfO2 is the dielectric constant (the relative dielectric constant is 16, which is calculated by SE data and verified by C-V measurement, and the ε 0 is 8.85 × 10-12 F/m).
Similar(7)
But according to previous study [17, 40], neither Mo vacancy nor S vacancy changes the nonmagnetic property of monolayer MoS2.
The filamentary mode is achieved by the formation and rupture of oxygen vacancy filament(s) between two electrodes.
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Density of states of monolayer MoS2 (a), monolayer MoS2 with Mo vacancy (b), monolayer MoS2 with S vacancy (c).
In order to consider the non-uniform surface, the substitutional, vacancy, and S-trapped sites of F- and O-functionalized Ti2C are designed.
For bulk CdS, the magnetism originates from Cd, instead of S, vacancies.
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