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Excellent agreement is obtained between calculation and experimental measurements mainly using the atom probe.
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Subsequently, as measured experimentally using the tomographical atom probe, continuous diffusional partitioning between the parent β- and product α-phases during isothermal annealing drives their compositions towards equilibrium.
The utility of the environmental transfer hub is demonstrated through the acquisition of previously unavailable mass spectral analysis of an intact organic molecule made possible via controlled cryogenic transfer into the atom probe using the hub.
In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters.
Using interaction parameters deduced from the matrix compositions in over-aged samples measured using 3-dimensional atom probe, the simulation has successfully reproduced early-stage metastable GPI zone precipitation behaviour including evolution of the cluster chemistry, the cluster number density and cluster size.
The microstructures were characterized using atom probe tomography and the results were analyzed in light of the existing literature.
DSIT phenomena and the associated secondary phase nucleation were observed at atomic scale using atom probe tomography.
In this work we have analyzed the distribution of Dy in sintered (Nd,Dy)–Fe B magnets using the three-dimensional atom probe (3DAP) technique complemented with high-resolution scanning and transmission electron microscopy.
Here, we have analyzed elemental distributions in precipitates and matrices of nanostructured multiphase quaternary Pb chalcogenides doped to levels below and above the solubility limit of the matrix, using three-dimensional atom probe tomography.
In this work, the internal oxidation process and its resultant metal-oxide heterostructures are systematically analyzed in 3D at the finest length scales, using atom probe tomography (APT).
3D imaging of the back contact region using atom probe tomography shows that optimized devices are characterized by preferential segregation of copper to both the Au|ZnTe and CdTe|ZnTe interfaces, perhaps in the form of CuxTe.
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