In TedCas we solve that by using our Natural User Interfaces which through the use of an optoelectronic device (for example the Kinect camera) allow the Medical Doctors to control any kind of medical software through voice and gestures, without any contact and therefore avoiding bacterial infections of this kind.
One of the advantages of using Au/PS sphere arrays as an optoelectronic device is that the optoelectronic properties of the structure can be tuned and modulated via varying sample parameters such as the diameter of the sphere and the thickness of the Au shell.
The perometer is an optoelectronic device that uses infrared beams to measure and calculate overall limb volume [ 44– 44].
An optoelectronic device using GaN nanowires was demonstrated in [9].
Silicon (Si) is an important material used for optoelectronic device applications, such as sensors, photodetectors, and solar cells, due to its abundance in the earth's crust, low-cost, and mature fabrication technique[1 4].
Especially, the band-gap of Zn1−xMg x O alloys can be tuned from 3.3 to 4.2 eV by Mg incorporation with different contents, which suggests that Zn1−xMg x O has great potential for using as optoelectronic devices in deep ultraviolet (UV) region [1 3].
The aim of the present work is to deposit CdO thick films by screen printing technique and investigate their structural, optical and electrical properties to use them in optoelectronic device applications.
Semiconductor InAs, GaSb and InAs/InxGa1−xSb superlattices have been used for optoelectronic devices in a wide infrared region from near to long wavelength infrared.
Perylene bisimides (PBIs) are one example of useful π-conjugated molecules that can be used in optoelectronic devices as n-type materials with strong visible light absorption.
ZnSe is an interesting II-VI semiconducting material, widely used in optoelectronic devices, because its bandgap (2.7 eV) belongs to the visible region [2].
