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In this paper, the surface of TONRs were passivated by 10 and 30 nm thick Zn(O,S) layers with a relatively narrow band gap using an atomic layer deposition technique to modulate the thickness exactly.
A high-performance membrane electrode assembly (MEA) with low platinum loading was successfully prepared using an atomic layer deposition (ALD) technique, in which the platinum was directly deposited on the gas diffusion layer to form the catalyst layer.
Al2O3/La2O3/Al2O3 gate stacks (S1 ~ S4) were deposited on p-type Si (100) wafers using an atomic layer deposition reactor (Picosun R-200, Espoo, Finland).
To obstruct the gate-injected electrons, an Al2O3/HfO2 (1 nm/6 nmultistackack gate insulator was deposited for the MISHFET at 250°C by using an atomic layer deposition technique (trimethylaluminum and water vapor were used as precursors).
La2O3 and La1 − x Al x O3 gate stacks were deposited on p-type Si (8 to 12 Ω⋅cm) B-doped (100) wafers using an atomic layer deposition reactor (Picosun R-200, Espoo, Finland).
Then, a switching layer of 4-nm-thick HfO2 was deposited using an atomic layer deposition system using TEMAH as a precursor and H2O as an oxidizer at 250°C.
Similar(53)
We designed a uniform insulating polymer layer as a mask on an electroconductive glassy carbon substrate and then peeled off a part of the layer in nano-sized dots by scratching the overcoat layer using an atomic force microscope (AFM) cantilever.
Alkyl-zinc and zinc oxide-type sites were synthesized via atomic layer deposition on high-surface-area silica using an integrated atomic layer deposition-catalysis instrument (I-ALD-CAT).
Herein, we report the use of an atomic layer deposition (ALD) technology to fabricate a new class of CdS@ZnO core-shell heterostructure.
In professor Jeff Glass's laboratory, Poneman heard about three different technologies being pursued through the use of an atomic layer deposition system.
The ultra-low loading amount of Pt nanoparticles on three-dimensional bacterial cellulose derived carbon nanofibers (BCF) was achieved by using a modified atomic layer deposition (ALD) process for hydrogen evolution reaction (HER).
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