The advantages of using a single component precursor is that the organic moiety present in the precursor acts as the source for carbon and in-situ formed tungsten/tungsten carbide acts as a catalyst for the formation of carbon nanotubes.
In summary, we demonstrate a thermal decomposition method for the synthesis of 1-D WO3nanorods in high yield using a single source precursor.
We present here a novel approach to achieve the selective formation of different in-plane boron nitrogen carbon heterostructures on Pt(111) using a single molecular precursor, namely dimethylamine borane (DMAB).
Thin films of cubic SiC have been prepared on Si 001) substrates in situ by high vacuum metal-organic chemical vapor deposition (HVMO-CVD) method using a single source precursor at various growth temperatures in the range of 300 1000°C.
Growth of titanium dioxide (TiO2) thin films on Si(100) substrates was carried out using a single molecular precursor at deposition temperature in the range of 300 700°C by the metal organic chemical vapor deposition (MOCVD) method.
Thin films of titanium dioxie (TiO2) were deposited on glass using a single molecular precursor such as titanium (IV) iso-propoxide (Ti[OCH(CH3 2] 4, 97%) by sol-gel processing.
The polymer film was deposited on a Si substrate by the PECVD method using a single molecular precursor, and the film was then treated using the DBD plasma surface treatment (or modification) method in N2 plasma under atmospheric pressure to form the amine groups on the surface.
The plasma-polymerized cyclohexane film was deposited on the Si substrate according to the radio frequency plasma-enhanced chemical vapor deposition method using a single molecular precursor, and it was then treated by the dielectric barrier discharge method in a nitrogen environment under atmospheric pressure.
To comparative study on the growth behavior and structural properties of thin films, in this work, we have deposited the titanium oxide (TiO2) thin films on both Si(1 0 0) and Si(1 1 1) substrates using a single molecular precursor by metal-organic chemical vapor deposition method at temperature in the range of 600 750 °C and working pressure of 1.0×10−5 Torr.
It is a very effective method for preparing metal sulfides with rectification through SBA-15 as hard template and using a single-source precursor.
