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(a) CV of SiO2 NTs using a scan rate of 0.1 mVs−1.
The electrochemical response of each composite was analyzed from −0.9 to 0.9 V using a scan rate of 50 mV s−1.
A high specific capacity of 548 mAh g−1 was obtained for the MoSe2/Ni electrode from CV profile measured using a scan rate of 5 mV s−1.
The Linear Polarization Technique was applied using a scan rate of 0.125 1 mV/s and a polarization of ±10 mV in relation to the Open Circuit Potential.
All the samples were measured in the continuous scan mode in the 2θ range of 10 90°, using a scan rate of 0.02 deg/s.
To compare V. oleifera and AuNPs, we focus on the results using a scan rate of 100 mV/s (Fig. 2c).
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Fig. 5a and b show the cooling and heating, exothermic and endothermic μ-DSC curves for the 0.5 wt.% mixed gellan gum solutions with 0, 50, and 100% high acyl gellan, at their natural pH values using a scanning rate of 0.2 °C/min.
Cu Kα radiation was used with a scan rate 0.03 s−1.
A silicon tip was used with a scan rate of 1 2 Hz.
Super-sharp silicon tips (Silicon-MDT Ltd) with resonance frequency of about 106 kHz were used at a scan rate of 1 2 Hz.
Layered films grown using a laser scan rate of 475 mm/s are more resistant to both localized and general corrosion than oxides fabricated at 550 mm/s.
More suggestions(15)
using a scan zoom
using a scan target
using a scan width
using a scan ultrasonography
using a scan line
using a ramp rate
using a scan length
using a scan A-scan
using a controlled rate
using a scan resolution
using a scan matrix
using a sampling rate
using a kinetic rate
using a typical rate
using a fouling rate
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