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In this work, HfO2 thin films with a thickness of 15 nm were deposited on p-type crystalline silicon wafers using a remote plasma atomic layer deposition system.
In this study, the HfO2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system.
After each TiN BE had been etched with chlorine-based gas, the remaining photoresist (PR) and etching residues were removed using a remote plasma system that applied O2 and H2O at 180 °C.
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In some cases the samples were cleaned using a remote hydrogen plasma process prior to PEALD growth.
That means using a remote control.
Flowers were refilled using a remote control box.
For a-Si H, the light a-Si H,r layers were grown by a remotheplight technique using absorber elayersde configuration in plasma-enhanced chemical vapor deposition (PECVD).
In this work, we used the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique to deposit the a-Si H, which is a-Si H,e plasma procedure [6] that could reduce the damage to the c-Si surface.
High density plasma assisted sputtering source (HiPASS) has been introduced to develop a remote plasma sputtering.
She can also use a remote to change the music.
You use a remote, just as with a CD player.
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