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Single-channel activities were examined using a ramp voltage protocol from −100 to 100 mV, or a series of step protocols to the given applied voltages (−60, −40, −20, 0, 20, 40 or 60 mV).
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Activation of Panx1 channels by voltage was performed using a ramp protocol with voltages from the holding potential of −60 mV to +100 mV.
Then they were anodized for the first time using a ramp to achieve the desired voltage.
Using a ramp function makes finding this "surge voltage" quick and practical, without having to incrementally adjust a constant voltage, and adjusting it again should the "surge voltage" change.
Heat strongly activates the channel, which could be observed at a broad voltage range using a ramp protocol.
Current-voltage (I-V) relations were obtained using a ramp protocol.
using a ramp load of 43.8-kg-force per minute.
In this case, the temperature was ramped to 500°C under 125 sccm of NH3 using a ramp rate of 10°C/min.
By first using a voltage ramp, the potential difference at the junction is increased until the dielectric barriers are breached, leading to an expected sharp increase in current.
Conductance measurements were determined using the slope of the current trace induced by a ramp voltage after a definite insertion of a gp10 connector was observed.
Currents were measured with a ramp voltage protocol and 5 mM Ba2+ was used as a charge carrier to enhance currents through Ca2+ channels.
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