Sentence examples for using a high vacuum from inspiring English sources
The pure compound was recovered from the 20% acetonitrile eluate, by evaporating acetonitrile and water using a high vacuum concentrator.
The doped transport layers are formed using a high vacuum co-evaporation deposition technique (i.e. co-sublimation of matrix and dopant).
Photo-catalysis experiments were performed at atmospheric conditions under various humidity levels (0, 16.8, and 33.6 relative humidity%) using a high vacuum chamber equipped with online gas-chromatography as a batch-type reactor.
The friction and wear properties of the solid liquid duplex coating, the bare TiC/a-C H film and TiC/a-C Hlubricated steel in high vacuum were compared using a high vacuum wear tester.
In this study, the gas diffusion and solubility of the asymmetric polyimide membrane irradiated by He ions were investigated using a high vacuum apparatus equipped with a Baratron absolute pressure gauge at 76 cmHg and 35 °C.
Au-coated glass coverslips (Fisher Scientific) were prepared by deposition of thin films of Ti (150 Å) followed by Au (150 Å) using a high vacuum evaporator (Polaron E6100) at a deposition rate of 2 Å/s and a chamber base-pressure of 2·10−6 Torr.
The advantage of using a higher vacuum and aspiration rate, a technique known as ultrasound-assisted phacoaspiration, makes the whole surgical process less invasive, reducing surgical time and energy.
The silver electrodes were then deposited on the PDMS substrates using a high-vacuum system (QPrep400, Mantis, England) by standard micro-fabrication techniques.
In this work, phosphorous-doped single-walled carbon nanotubes have been synthesized by the thermal decomposition of trimethylphosphine using a high-vacuum chemical vapor deposition method.
The FE properties of the CNT bundle arrays were examined using a high-vacuum system including a pair of parallel plate electrodes with 20-μm diameter configuration under a pressure of about 5 × 10−7 Torr.
Figure 1 schematically illustrates the fabrication flow, which started with (Figure 1a) a 2-nm-thick SiC film and 4-nm-thick poly-Si being deposited alternately four times on the n-doped Si substrate using a high-vacuum sputtering system and electron beam evaporation.
