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Then the field emission characteristics of the DLC/Ti films have been studied using a diode structure in comparison with the DLC films without the Ti interfacial layer.
Field emission properties were measured by using a diode structure at the base pressure of 1 × 10−3 Pa.
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Infrared reflectance images were generated using a diode laser at 830 nm.
The absorbance was measured using a diode array detector at 286 nm.
Phalloidin was imaged by using a diode laser at 405 nm also mounted on the microscope.
Micah B. Yairi, Hilmi V. Demir, Chris W. Coldren, David A. B. Miller, and James S. Harris, Jr., "Optically-Controlled Optical Gate Using a Double Diode Structure," Presented at the Lasers and Electro-Optics Society Twelfth ANovembereting, San Francisco, CA (November 8-11, 1999).
Sugars were detected by indirect UV detection using a diode-array detector.
Spectra were obtained using a diode-array spectrophotometer for both standard and kinetics measurements.
UV visible spectra were measured using a diode-array Agilent 89090A spectrophotometer.
Initially, thin-film CQD PVs used a Schottky diode structure with a metal (Fig. 3b) [17, 17].
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