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Another variation, known as plasma-enhanced (or plasma-assisted) chemical vapour deposition, uses low pressure and high voltage to create a plasma environment.
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Using low pressure and noble gasses can be the disadvantages of this method.
The detection limit of trace species measurement was enhanced using low pressure LIBS and LB-TOFMS.
It was produced using low pressure, retained some structure and was regarded as a meat ingredient on value products.
Initially, a low-stress SiN x layer was deposited on the wafer using low pressure chemical vapor deposition.
The detection limit of Hg can be enhanced to 3.5 ppb when employing N2 as the buffer gas using low pressure LIBS.
This work was addressed to the analysis of poly N-vinyl-2-pyrrolidone) (poly N-vinyl-2-pyrrolidonehotocrosslinking in aqueous solution, using low poly N-vinyl-2-pyrrolidonenm).
ZrC films were deposited on a graphite substrate using low pressure chemical vapor deposition (LPCVD) in the presence of Ar + H2 dilution gas with different concentrations of H2.
The effect of deposition temperature on deposition kinetics and mechanism of silicon boron nitride (SiBN) coating was investigated from SiCl4 BCl3 NH3 H2 Ar mixture using low pressure chemical vapor deposition (LPCVD).
We describe the deposition of Er/Yb co-doped YF3 thin films on Si(111) wafers using low pressure pulsed liquid injection MOCVD.
In this paper a styrene ethylene/butylene)–styrene block co-polymer (SEBS) microstructured by a rapid replication technique using low pressure an isothermal hot embossing approach has been demonstrated.
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