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These superior characteristics of the cross-point RRAM array could be useful for future nonvolatile memory applications.
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RRAM is another promising candidate for future nonvolatile memory devices [75 77].
In this study, we have found that the CeO x -based RRAM device exhibits good switching characteristics with reliable endurance and data retention, suitable for future nonvolatile memory applications.
Resistive switching memory using GeO x material in different structures such as Ni/GeO x /SrTiO x /TaN[36] and Pt/SiGeO x /SiGeON/TiN[37] has also been reported for future nonvolatile memory applications.
This memory structure can be useful for future nanoscale nonvolatile memory device applications.
This device is operated even at a lowest CC of 0.1 μA (Figure 12b) with a large resistance ratio of >104, which is very useful for future nanoscale nonvolatile memory applications.
This may be useful for future references.
Professors often find this information useful for future reference.
They were useful for future component design and system optimum.
Detailed understanding of the thiolation process can be very useful for future applications of PANI.
Many new results are also presented which should be useful for future research.
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