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These are brittle and unsuitable for direct use in fabricating products, but they are useful sources of these elements for the alloy steels.
Recently, as an alternative to ITO, copper nanowires (CuNWs) have been studied extensively for use in fabricating transparent conductors.
The Si(110) surface has a potential use in fabricating vertical double-gate metal oxide semiconductor field effect transistors that enable much higher integration [24].
Tin oxide (SnO2), a wide bandgap semiconductor, is well known for its excellent gas sensitivity [10, 11] and its use in fabricating transparent conductive glasses [12].
The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells.
This result indicated that the synthesized SnO2 RuO2 composite powder of nano-size scale is candidate for use in fabricating monolithic hybrid batteries using suitable electrolyte as well.
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ZTO thin films have been widely used in fabricating semiconductor gas sensors [16, 17].
The obtained films may be used in fabricating solar cell and treating dye wastewater.
Without this added protection, the ultra-thin oxides used in fabricating CMOS devices can be easily ruptured.
On the other hand, the particular branch structure of alumina pore channel can be used in fabricating Y-shaped carbon nanotubes [19].
Various techniques such as reactive ion etching, electrochemical etching, and anisotropic chemical etching are used in fabricating silicon-based functional devices [1].
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