Single-crystalline iridium dioxide nanowires show the time-dependent universal conductance fluctuations (TUCFs) at cryogenic temperatures.
And then, the oscillations are molested by the bulk transport of the thick film, where the universal conductance fluctuations come to be more pronounced.
This conjecture is motivated by the accumulated evidence over the decades that the energy spectra of very simple non-integrable classically chaotic systems contain universal level fluctuations described by random matrix theory.
Similar to the WAL effect, the universal conductance fluctuations (UCFs) due to the electron (or hole) interference between two classical paths is closely related to the phase coherent length l i [37-40] [37-40]
One of the experimental realizations of the marked quantum-interference effects is the observation of the universal conductance fluctuations (UCFs)[1 3] in Q1D metallic[4, 5] and heavily doped semiconductor[6, 7] nanowires.
In recent years, mesoscopic quantum interference phenomena of these TI materials have been heatedly researched, such as Aharonov-Bohm oscillations, universal conductance fluctuations, weak antilocalization (WAL) effects and Shubnikov de Haas (SdH) oscillations, in which many relevant physical parameters have been obtained [8 13].
Interestingly, many classically chaotic models systems also display universal energy level fluctuations that are well described by Wigner's methods (Casati, Guarneri and Valz-Gris 1980; Bohigas, Giannoni and Schmit 1984).
Holonomic quantum computation is the idea to use non-Abelian geometric phases to implement universal quantum gates that are robust to fluctuations in control parameters.
If this fluctuation-immunogenicity hypothesis is a universal aspect of immunogenicity (i.e., immune system recognition of an epitope within a loop is more reliable when it is presented via a more stable delivery structure), then fluctuation measures can serve as one predictor of immunogenicity as part of a computer-aided vaccine design strategy.
The random circuit breaker network (RCB) model points out that the fluctuation of the voltages is the universal problem of RRAM devices and it originated from the working principles of devices.
