For comparison, a diamond film was continuously prepared under the same growth conditions without etching.
The InGaN-based LEDs with a conventional sapphire substrate (CSS), SLAPSS, and HLAPSS were grown under the same growth condition.
For comparison, an un-implanted silica substrate was deposited with the TiO2 film under the same growth condition.
Single layers of InGaN films with different thicknesses under the same growth conditions were grown by radio-frequency molecular beam epitaxy (RF-MBE).
No urease activities were detected from the wild type P. aeruginosa 8821 and P. aeruginosa PAO1 under the same growth conditions.
For comparison, InSb layers were also grown directly on Si (111) under the same growth conditions but without InAs seed layer.
Surprisingly, high-yield silver rodlike nanostructures, nanospheres, and nanowires can be obtained under the same growth environment and reactant concentrations by simply changing the MW of PVP.
Two sets of InGaAs QR samples were grown by MBE under the same growth conditions but with different As sources (As2 and As4) on (001 -oriented GaAs substrates.
A Si-doped GaN nanowall network was also grown with a N/Ga ratio of 400 under the same growth procedure.
In contrast, ZnO rods grown on sapphire under the same growth conditions are generally less than 5 μm long [20, 21].
Under the same growth conditions, the growth direction of ZnO films has changed from [100] to [002] after introducing AlN as the buffer.
