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The typical scanning speed was 1 Hz for all measurements.
AFM worked with tapping mode in PBS buffer solution at typical scanning rate of 2.0 Hz.
Typical scanning electron micrograph (SEM) image of fabricated Si nanoribbon field-effect transistor structure.
Fig. 1 The typical scanning electron microscopy (SEM) patterns of a UiO-66 and b Pd/MOF.
The typical scanning electron microscopy (SEM) imaging of the UiO-66 and Pd/MOF has been shown in Fig. 1.
Figure 1a is a typical scanning electron microscopy (SEM) image of the pyramidal texturing of the Si (100) surface following its KOH chemical treatment.
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The typical scan area is 1 × 1 μm2.
A typical scan rate was 0.01o/s, and the 2θ range was 15o 85o.
A typical scan has a parachuting over a downward step and a peak over an upward step.
Figure 1 depicts a three-dimensional image (1.2 × 1.2 μm) of the HfO2/GaAs surface topography after nanostructuring and a typical scan profile across an etched trench.
Figure 9 shows the surface morphology of sample D and sample C. For the typical scan area of 1 × 1 μm2, the surface roughness of sample D and sample C was measured at 0.48 and 0.39 nm, respectively; for the typical scan area of 0.5 × 0.5 μm2, the surface roughness of sample D and sample C was measured at 0.46 and 0.27 nm, respectively.
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