Sentence examples for typical growth rate. from inspiring English sources

Typical growth rate is less than one molecule layer / deposition cycle, however some precursors can provide several molecular layers in a cycle.

In deformation twinning, the magnitude of the characteristic shear, the complexity of local atomic rearrangements, and step height have been all shown to determine the disconnection's possible activation and typical growth rate and thereby the morphology of the associated twin.

A cold drifting plasma is found to be unstable with typical growth rate γ ≈ 0.4-0.6 0.4-0.6Δx is the grid spaCs/Δxand Cs is the ion acoustic speed); simulations show that unstable growth is saturated by particle trapping leading to heated ions.

According to FESEM measurements, typical growth rate is estimated to be 0.2 1 μm/h under 0 30°C in 1 20 wt% sulfuric acid.

The typical growth rate of GaAs and GaInP is 1 μm/h, which is evidenced by XRD measurements and RHEED oscillation.

The typical growth rate of the population within a megacity has slowed from more than 8percentt in the '80s to less than half that over the last five years, and their number is expected to stagnate in the next quarter century.

In one, tracts of pine trees exposed to elevated levels of the gas initially absorbed large amounts and had a short growth spurt, but then reverted to typical growth rates.

Transparent coatings with a thickness of up to 2 μm were deposited on hardened high-speed steel, silicon (wafer material) and Si3N4 ceramics with typical growth rates in the region of 0.35 μm/h.

The results of the investigation are compared to typical growth rates for long cracks and it is found that the increase in growth rate due to a prescribed stress intensity factor range was much less pronounced as compared to what holds for long cracks.

For typical growth rates, in Régime II, polyethylene lamellae form with disordered {001} fold surfaces then transform, with lamellar thickening and twisting, towards the more-ordered condition found for slower crystallization in Régime I, in which lamellae form with and retain {201} fold surfaces.

Typical growth rates are 10 A° ∕s for lnGaAs and 5 A° ∕s for InP [44].